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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. LPDDR4X
  5. K3UH5H50AM-EGCL

Samsung Semiconductor - K3UH5H50AM-EGCL

KEY Part #: K7359728

[23158د کمپیوټر سټاک]

    برخه شمیره:
    K3UH5H50AM-EGCL
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: DDR4, HBM Flarebolt, MODULE, LPDDR5, GDDR5, HBM Aquabolt, DDR3 and SLC Nand ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K3UH5H50AM-EGCL electronic components. K3UH5H50AM-EGCL can be shipped within 24 hours after order. If you have any demands for K3UH5H50AM-EGCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K3UH5H50AM-EGCL د محصول ځانګړتیاوې

    برخه شمیره : K3UH5H50AM-EGCL
    جوړوونکی : Samsung Semiconductor
    توضيح : 32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production
    لړۍ : DDR3
    تراکم : 32 Gb
    څرګندکه. : x64
    سرعت : 4266 Mbps
    ولټيج : 1.8 / 1.1 / 0.6 V
    TEMP. : -25 ~ 85 °C
    ټولګې : 376FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    Mass Production of Fifth-Generation V-NAND has Started
    The future of NAND technology
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Unlocking the Power of Cloud Computing
    Automotive Driven by Small Packages Under the Hood
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Inside the building blocks of the 5G future
    تاسو ممکن پدې کې هم علاقه ولرئ
    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    ګرم برخې