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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. LPDDR4X
  5. K4U8E3S4AD-GFCL

Samsung Semiconductor - K4U8E3S4AD-GFCL

KEY Part #: K7359745

[21138د کمپیوټر سټاک]

    برخه شمیره:
    K4U8E3S4AD-GFCL
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    8 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: LPDDR3, DDR3, HBM Flarebolt, HBM Aquabolt, LPDDR4X, LPDDR5, DDR4 and GDDR6 ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K4U8E3S4AD-GFCL electronic components. K4U8E3S4AD-GFCL can be shipped within 24 hours after order. If you have any demands for K4U8E3S4AD-GFCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4U8E3S4AD-GFCL د محصول ځانګړتیاوې

    برخه شمیره : K4U8E3S4AD-GFCL
    جوړوونکی : Samsung Semiconductor
    توضيح : 8 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production
    لړۍ : DDR3
    تراکم : 8 Gb
    څرګندکه. : x32
    سرعت : 4266 Mbps
    ولټيج : 1.8 / 1.1 / 0.6 V
    TEMP. : -40 ~ 95 °C
    ټولګې : 200FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    Speed for the next generation of mobile devices
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Mission Peak Reference Server System for NGSFF SSD
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Automotive Driven by Small Packages Under the Hood
    [Video] 5G memory solutions : 5G. All in the Memory.
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    تاسو ممکن پدې کې هم علاقه ولرئ
    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    ګرم برخې