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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. LPDDR4X
  5. K4UBE3D4AM-GUCL

Samsung Semiconductor - K4UBE3D4AM-GUCL

KEY Part #: K7359751

[25749د کمپیوټر سټاک]

    برخه شمیره:
    K4UBE3D4AM-GUCL
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: LPDDR4, SLC Nand, LPDDR4X, LPDDR3, HBM Flarebolt, GDDR5, GDDR6 and MODULE ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K4UBE3D4AM-GUCL electronic components. K4UBE3D4AM-GUCL can be shipped within 24 hours after order. If you have any demands for K4UBE3D4AM-GUCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4UBE3D4AM-GUCL د محصول ځانګړتیاوې

    برخه شمیره : K4UBE3D4AM-GUCL
    جوړوونکی : Samsung Semiconductor
    توضيح : 32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production
    لړۍ : DDR3
    تراکم : 32 Gb
    څرګندکه. : x32
    سرعت : 4266 Mbps
    ولټيج : 1.8 / 1.1 / 0.6 V
    TEMP. : -40 ~ 125 °C
    ټولګې : 200FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Mission Peak Reference Server System for NGSFF SSD
    Autonomous Driving and the Quest for Safety
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Speed for the next generation of mobile devices
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Automotive Driven by Small Packages Under the Hood
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    تاسو ممکن پدې کې هم علاقه ولرئ
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    ګرم برخې