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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. LPDDR4X
  5. K3UH9H90BM-AGCL

Samsung Semiconductor - K3UH9H90BM-AGCL

KEY Part #: K7359735

[23940د کمپیوټر سټاک]

    برخه شمیره:
    K3UH9H90BM-AGCL
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    80 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: LPDDR4, MODULE, SLC Nand, DDR4, DDR3, GDDR5, HBM Aquabolt and HBM Flarebolt ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K3UH9H90BM-AGCL electronic components. K3UH9H90BM-AGCL can be shipped within 24 hours after order. If you have any demands for K3UH9H90BM-AGCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K3UH9H90BM-AGCL د محصول ځانګړتیاوې

    برخه شمیره : K3UH9H90BM-AGCL
    جوړوونکی : Samsung Semiconductor
    توضيح : 80 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production
    لړۍ : DDR3
    تراکم : 80 Gb
    څرګندکه. : x64
    سرعت : 4266 Mbps
    ولټيج : 1.8 / 1.1 / 0.6 V
    TEMP. : -25 ~ 85 °C
    ټولګې : 556FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    5G and Memory - from Connected Thinking to Connected Living
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Autonomous Driving and the Quest for Safety
    The future of NAND technology
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Inside the building blocks of the 5G future
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    The Ultra-Low Latency SSD, Z-SSD
    How Will 5G Impact on Memory?
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    تاسو ممکن پدې کې هم علاقه ولرئ
    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    ګرم برخې