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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. DDR4
  5. K4A8G045WC-BCPB

Samsung Semiconductor - K4A8G045WC-BCPB

KEY Part #: K7359592

[25205د کمپیوټر سټاک]

    برخه شمیره:
    K4A8G045WC-BCPB
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    8 Gb 2G x 4 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: HBM Flarebolt, LPDDR3, SLC Nand, DDR4, MODULE, GDDR5, DDR3 and LPDDR4X ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K4A8G045WC-BCPB electronic components. K4A8G045WC-BCPB can be shipped within 24 hours after order. If you have any demands for K4A8G045WC-BCPB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G045WC-BCPB د محصول ځانګړتیاوې

    برخه شمیره : K4A8G045WC-BCPB
    جوړوونکی : Samsung Semiconductor
    توضيح : 8 Gb 2G x 4 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production
    لړۍ : DDR4
    تراکم : 8 Gb
    څرګندکه. : 2G x 4
    سرعت : 2133 Mbps
    ولټيج : 1.2 V
    TEMP. : 0 ~ 85 °C
    ټولګې : 78FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    SSDs, DRAM and gaming: Unlocking a new level of performance
    Speed for the next generation of mobile devices
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Inside the building blocks of the 5G future
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    تاسو ممکن پدې کې هم علاقه ولرئ
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

    ګرم برخې