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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. DDR4
  5. K4A8G165WB-BCWE

Samsung Semiconductor - K4A8G165WB-BCWE

KEY Part #: K7359609

[24756د کمپیوټر سټاک]

    برخه شمیره:
    K4A8G165WB-BCWE
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: LPDDR4, SLC Nand, LPDDR3, HBM Flarebolt, LPDDR4X, MODULE, GDDR5 and HBM Aquabolt ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K4A8G165WB-BCWE electronic components. K4A8G165WB-BCWE can be shipped within 24 hours after order. If you have any demands for K4A8G165WB-BCWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G165WB-BCWE د محصول ځانګړتیاوې

    برخه شمیره : K4A8G165WB-BCWE
    جوړوونکی : Samsung Semiconductor
    توضيح : 8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
    لړۍ : DDR4
    تراکم : 8 Gb
    څرګندکه. : 512M x 16
    سرعت : 3200 Mbps
    ولټيج : 1.2 V
    TEMP. : 0 ~ 85 °C
    ټولګې : 96FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Inside the building blocks of the 5G future
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Unlocking the Power of Cloud Computing
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Memory Solutions for Automotive
    تاسو ممکن پدې کې هم علاقه ولرئ
    • KHA844801X-MC12

      Samsung Semiconductor

      4 Gb 1024 2.0 Gbps 32 ms MPGA Mass Production.

    • KHA844801X-MC13

      Samsung Semiconductor

      4 Gb 1024 2.4 Gbps 32 ms MPGA Mass Production.

    • KHA844801X-MN12

      Samsung Semiconductor

      4 Gb 1024 2.0 Gbps 32 ms MPGA Mass Production.

    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    ګرم برخې