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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. DDR4
  5. K4A4G165WE-BCWE

Samsung Semiconductor - K4A4G165WE-BCWE

KEY Part #: K7359583

[14339د کمپیوټر سټاک]

    برخه شمیره:
    K4A4G165WE-BCWE
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: MODULE, HBM Aquabolt, LPDDR4, HBM Flarebolt, DDR3, GDDR5, LPDDR5 and DDR4 ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K4A4G165WE-BCWE electronic components. K4A4G165WE-BCWE can be shipped within 24 hours after order. If you have any demands for K4A4G165WE-BCWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G165WE-BCWE د محصول ځانګړتیاوې

    برخه شمیره : K4A4G165WE-BCWE
    جوړوونکی : Samsung Semiconductor
    توضيح : 4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
    لړۍ : DDR4
    تراکم : 4 Gb
    څرګندکه. : 256M x 16
    سرعت : 3200 Mbps
    ولټيج : 1.2 V
    TEMP. : 0 ~ 85 °C
    ټولګې : 96FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Speed for the next generation of mobile devices
    Samsung Z-SSD SZ985
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    تاسو ممکن پدې کې هم علاقه ولرئ
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

    ګرم برخې