Samsung Semiconductor - K4A4G165WE-BIRC

KEY Part #: K7359584

[24465د کمپیوټر سټاک]


    برخه شمیره:
    K4A4G165WE-BIRC
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    4 Gb 256M x 16 2400 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: DDR4, LPDDR4, LPDDR5, GDDR6, LPDDR4X, SLC Nand, GDDR5 and HBM Flarebolt ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K4A4G165WE-BIRC electronic components. K4A4G165WE-BIRC can be shipped within 24 hours after order. If you have any demands for K4A4G165WE-BIRC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G165WE-BIRC د محصول ځانګړتیاوې

    برخه شمیره : K4A4G165WE-BIRC
    جوړوونکی : Samsung Semiconductor
    توضيح : 4 Gb 256M x 16 2400 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production
    لړۍ : DDR4
    تراکم : 4 Gb
    څرګندکه. : 256M x 16
    سرعت : 2400 Mbps
    ولټيج : 1.2 V
    TEMP. : -40 ~ 95 °C
    ټولګې : 96FBGA
    د محصول د حالت : Mass Production

    تاسو ممکن پدې کې هم علاقه ولرئ
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.