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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. DDR3
  5. K4B4G1646D-BYMA

Samsung Semiconductor - K4B4G1646D-BYMA

KEY Part #: K7359697

[19892د کمپیوټر سټاک]

    برخه شمیره:
    K4B4G1646D-BYMA
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    4 Gb 256M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: LPDDR3, SLC Nand, LPDDR5, LPDDR4, HBM Flarebolt, LPDDR4X, MODULE and GDDR6 ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K4B4G1646D-BYMA electronic components. K4B4G1646D-BYMA can be shipped within 24 hours after order. If you have any demands for K4B4G1646D-BYMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646D-BYMA د محصول ځانګړتیاوې

    برخه شمیره : K4B4G1646D-BYMA
    جوړوونکی : Samsung Semiconductor
    توضيح : 4 Gb 256M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    لړۍ : DDR3
    تراکم : 4 Gb
    څرګندکه. : 256M x 16
    سرعت : 1866 Mbps
    ولټيج : 1.35 V
    TEMP. : 0 ~ 85 °C
    ټولګې : 96FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Inside the building blocks of the 5G future
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    5G and Memory - from Connected Thinking to Connected Living
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Mass Production of Fifth-Generation V-NAND has Started
    تاسو ممکن پدې کې هم علاقه ولرئ
    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    ګرم برخې