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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. DDR3
  5. K4B4G0846D-BYK0

Samsung Semiconductor - K4B4G0846D-BYK0

KEY Part #: K7359674

[17080د کمپیوټر سټاک]

    برخه شمیره:
    K4B4G0846D-BYK0
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: MODULE, GDDR5, SLC Nand, GDDR6, HBM Flarebolt, LPDDR5, LPDDR4 and DDR3 ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K4B4G0846D-BYK0 electronic components. K4B4G0846D-BYK0 can be shipped within 24 hours after order. If you have any demands for K4B4G0846D-BYK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G0846D-BYK0 د محصول ځانګړتیاوې

    برخه شمیره : K4B4G0846D-BYK0
    جوړوونکی : Samsung Semiconductor
    توضيح : 4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    لړۍ : DDR3
    تراکم : 4 Gb
    څرګندکه. : 512M x 8
    سرعت : 1600 Mbps
    ولټيج : 1.35 V
    TEMP. : 0 ~ 85 °C
    ټولګې : 78FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    How Will 5G Impact on Memory?
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    The future of NAND technology
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    5G and Memory - from Connected Thinking to Connected Living
    تاسو ممکن پدې کې هم علاقه ولرئ
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    ګرم برخې