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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. DDR3
  5. K4B2G1646F-BMMA

Samsung Semiconductor - K4B2G1646F-BMMA

KEY Part #: K7359663

[21752د کمپیوټر سټاک]

    برخه شمیره:
    K4B2G1646F-BMMA
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    2 Gb 128M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: HBM Flarebolt, LPDDR5, GDDR5, DDR3, DDR4, LPDDR4, MODULE and LPDDR3 ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K4B2G1646F-BMMA electronic components. K4B2G1646F-BMMA can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BMMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BMMA د محصول ځانګړتیاوې

    برخه شمیره : K4B2G1646F-BMMA
    جوړوونکی : Samsung Semiconductor
    توضيح : 2 Gb 128M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production
    لړۍ : DDR3
    تراکم : 2 Gb
    څرګندکه. : 128M x 16
    سرعت : 1600 Mbps
    ولټيج : 1.35 V
    TEMP. : -40 ~ 95 °C
    ټولګې : 96FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    Inside the building blocks of the 5G future
    Autonomous Driving and the Quest for Safety
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    [Video] 5G memory solutions : 5G. All in the Memory.
    Unlocking the Power of Cloud Computing
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Speed for the next generation of mobile devices
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    تاسو ممکن پدې کې هم علاقه ولرئ
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      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

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      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH5H50AM-JGCL

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      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.

    • K3UH6H60BM-AGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH6H60BM-EGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH7H70AM-AGCL

      Samsung Semiconductor

      64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    ګرم برخې