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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. DDR3
  5. K4B4G1646E-BCMA

Samsung Semiconductor - K4B4G1646E-BCMA

KEY Part #: K7359700

[15107د کمپیوټر سټاک]

    برخه شمیره:
    K4B4G1646E-BCMA
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: LPDDR4X, LPDDR4, HBM Aquabolt, GDDR5, DDR4, GDDR6, LPDDR5 and HBM Flarebolt ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K4B4G1646E-BCMA electronic components. K4B4G1646E-BCMA can be shipped within 24 hours after order. If you have any demands for K4B4G1646E-BCMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646E-BCMA د محصول ځانګړتیاوې

    برخه شمیره : K4B4G1646E-BCMA
    جوړوونکی : Samsung Semiconductor
    توضيح : 4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production
    لړۍ : DDR3
    تراکم : 4 Gb
    څرګندکه. : 512M x 8
    سرعت : 1866 Mbps
    ولټيج : 1.5 V
    TEMP. : 0 ~ 85 °C
    ټولګې : 96FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    Samsung Memory Solutions for Automotive
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    5G and Memory - from Connected Thinking to Connected Living
    Evolving Mobile Solutions: Samsung at MWC 2018
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Autonomous Driving and the Quest for Safety
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Samsung Z-SSD SZ985
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    High Bandwidth Memory is Catching on for Data-intensive Computing
    [Video] 5G memory solutions : 5G. All in the Memory.
    تاسو ممکن پدې کې هم علاقه ولرئ
    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    ګرم برخې