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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. DDR3
  5. K4B2G1646F-BCNB

Samsung Semiconductor - K4B2G1646F-BCNB

KEY Part #: K7359659

[15955د کمپیوټر سټاک]

    برخه شمیره:
    K4B2G1646F-BCNB
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    2 Gb 128M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: LPDDR4, HBM Flarebolt, GDDR5, HBM Aquabolt, LPDDR3, DDR4, GDDR6 and LPDDR4X ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K4B2G1646F-BCNB electronic components. K4B2G1646F-BCNB can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BCNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BCNB د محصول ځانګړتیاوې

    برخه شمیره : K4B2G1646F-BCNB
    جوړوونکی : Samsung Semiconductor
    توضيح : 2 Gb 128M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production
    لړۍ : DDR3
    تراکم : 2 Gb
    څرګندکه. : 128M x 16
    سرعت : 2133 Mbps
    ولټيج : 1.5 V
    TEMP. : 0 ~ 85 °C
    ټولګې : 96FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Mission Peak Reference Server System for NGSFF SSD
    The Ultra-Low Latency SSD, Z-SSD
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Inside the building blocks of the 5G future
    تاسو ممکن پدې کې هم علاقه ولرئ
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    ګرم برخې