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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. LPDDR4
  5. K4F2E3S4HM-MFCJ

Samsung Semiconductor - K4F2E3S4HM-MFCJ

KEY Part #: K7359759

[16007د کمپیوټر سټاک]

    برخه شمیره:
    K4F2E3S4HM-MFCJ
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: HBM Flarebolt, LPDDR3, HBM Aquabolt, DDR4, MODULE, DDR3, SLC Nand and GDDR6 ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K4F2E3S4HM-MFCJ electronic components. K4F2E3S4HM-MFCJ can be shipped within 24 hours after order. If you have any demands for K4F2E3S4HM-MFCJ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4F2E3S4HM-MFCJ د محصول ځانګړتیاوې

    برخه شمیره : K4F2E3S4HM-MFCJ
    جوړوونکی : Samsung Semiconductor
    توضيح : 12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production
    لړۍ : DDR3
    تراکم : 12 Gb
    څرګندکه. : x32
    سرعت : 3733 Mbps
    ولټيج : 1.8 / 1.1 / 1.1 V
    TEMP. : -40 ~ 95 °C
    ټولګې : 200FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    Samsung Z-SSD SZ985
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    The future of NAND technology
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    How Will 5G Impact on Memory?
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Autonomous Driving and the Quest for Safety
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    تاسو ممکن پدې کې هم علاقه ولرئ
    • M392A2K43BB0-CPB

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      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    ګرم برخې