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که ستاسو ځای لیست شوی نه وي ، مهرباني وکړئ لاندې څخه یو غوره کړئ:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. کور
  2. محصولات
  3. DRAM
  4. LPDDR4
  5. K4FHE3D4HM-MHCJ

Samsung Semiconductor - K4FHE3D4HM-MHCJ

KEY Part #: K7359781

[20140د کمپیوټر سټاک]

    برخه شمیره:
    K4FHE3D4HM-MHCJ
    جوړوونکی:
    Samsung Semiconductor
    تفصیلي توضیحات:
    24 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    په ګدام کښي
    د شیلف ژوند:
    یو کال
    له څخه چپ:
    هانګ کانګ
    RoHS:
    د تادیې میتود:
    بار وړلو لاره:
    د کورنۍ کټګورۍ:
    د کیی اجزاو شرکت ، LTD د بریښنایی اجزاو توزیع کونکی دی چې د محصول کټګورۍ وړاندیز کوي په شمول: LPDDR5, LPDDR4X, MODULE, GDDR6, DDR4, HBM Aquabolt, HBM Flarebolt and GDDR5 ...
    د سیالۍ ګټه:
    We specialize in Samsung Semiconductor K4FHE3D4HM-MHCJ electronic components. K4FHE3D4HM-MHCJ can be shipped within 24 hours after order. If you have any demands for K4FHE3D4HM-MHCJ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4FHE3D4HM-MHCJ د محصول ځانګړتیاوې

    برخه شمیره : K4FHE3D4HM-MHCJ
    جوړوونکی : Samsung Semiconductor
    توضيح : 24 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    لړۍ : DDR3
    تراکم : 24 Gb
    څرګندکه. : x32
    سرعت : 3733 Mbps
    ولټيج : 1.8 / 1.1 / 1.1 V
    TEMP. : -40 ~ 105 °C
    ټولګې : 200FBGA
    د محصول د حالت : Mass Production

    تازه ترین خبرونه

    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Inside the building blocks of the 5G future
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Automotive Driven by Small Packages Under the Hood
    Samsung Memory Solutions for Automotive
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    How Will 5G Impact on Memory?
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    The Ultra-Low Latency SSD, Z-SSD
    تاسو ممکن پدې کې هم علاقه ولرئ
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    ګرم برخې