GaN Systems GS-065-0xx 650V Enhancement Mode GaN Transistors
GaN Systems GS-065-0xx 650V Enhancement Mode GaN Transistors allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. The GS-065-004-1-L is a bottom-side cooled transistor in a 5×6mm PDFN package that offers low junction-to-case thermal resistance. These features combine to provide very high-efficiency power switching.
Features
Ultra-low FOM Island Technology® dieSmall 5×6mm PDFN packageEasy gate drive requirements (0V to 6V)Transient tolerant gate drive (-20V / +10V )A very high switching frequency (> 20MHz)
Applications
Power adaptersLED lighting driversFast battery chargingLLC converters
Gan systems Newest
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